Effect of temperature on polarization reversal of strontium-doped lead zirconate titanate (PSZT) ceramics

A. Response of Lead Zirconate Titanate Ceramics to Temperature Fluctuations

It has been found that some shapes of lead zirconate titanate (PZT) ceramics respond to rapid temperature fluctuations when mounted in a particular geometrical configuration. This effect is presumably caused by thermal stresses in the crystal which produce a voltage difference across the silvered surfaces. These units were originally constructed to serve as pressure transducers in a lowpressure...

Measurement of Flexoelectric Effect in Lead Zirconate Titanate Ceramics*

Lead zirconate titanate (PZT) ceramics is usually used as a piezoelectric material. However it has characteristics of not only piezoelectricity but also flexoelectricity. Piezoelectricity is a phenomenon that electric polarization is induced by strain, and flexoelectricity is the one that the polarization is induced by strain gradient. In this study, flexoelectricity in poled soft PZT ceramics ...

Large Electrocaloric Effect in Relaxor Ferroelectric and Antiferroelectric Lanthanum Doped Lead Zirconate Titanate Ceramics

Both relaxor ferroelectric and antiferroelectric materials can individually demonstrate large electrocaloric effects (ECE). However, in order to further enhance the ECE it is crucial to find a material system, which can exhibit simultaneously both relaxor ferroelectric and antiferroelectric properties, or easily convert from one into another in terms of the compositional tailoring. Here we repo...

Piezoelectricity in Lead-Zirconate-Titanate Ceramics – Extrinsic and Intrinsic Contributions

Microstructural and compositional analysis of strontium-doped lead zirconate titanate thin films on gold-coated silicon substrates.

This article discusses the results of transmission electron microscopy (TEM)-based characterization of strontium-doped lead zirconate titanate (PSZT) thin films. The thin films were deposited by radio frequency magnetron sputtering at 300 degrees C on gold-coated silicon substrates, which used a 15 nm titanium adhesion layer between the 150 nm thick gold film and (100) silicon. The TEM analysis...